Method of manufacturing a semiconductor device by means of...

Details Method of manufacturing a semiconductor device by means of... Method of manufacturing a semiconductor device by means of...

H - Electricity

01

L

356/177

H01L 21/306 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1208810

ABSTRACT: "Method of manufacturing a semiconductor device by means of plasma etching." A method of manufacturing a semiconductor device, in which a layer of silicon nitride (3) overlying a silicon oxide layer (4) present on a substrate (2) is etched by bring- ing it into contact with substantially only uncharged con- stituents of a plasma formed in a reactor to which a sub- sgantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine or of a compound containing a halogen different from fluorine are added to this gas or gas mixture which contains fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained, which moreover, does not vary during etching.

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