H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/138
H01L 21/76 (2006.01) H01L 21/308 (2006.01) H01L 21/314 (2006.01) H01L 21/318 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01)
Patent
CA 1230428
17 ABSTRACT: Method of manufacturing a semiconductor device comprising a semiconductor body, in which a sunken oxide layer is locally provided. In this method, after a first oxidation mask (21) has been provided on a surface of the silicon body (1), a depression (40) with side walls (41) extending below the first oxidation mask (21) is formed in the silicon body (1). Subsequently, after the side walls (41) have been provided with a second oxidation mask (70), an oxidation treatment is carried out. According to the invention, the depression (40) is provided in a manner such that the side walls (41) areflat and enclose an angle (42) of 25° to 45° with the original surface, while the second oxidation mask (70) is formed by a 5 to 50 nm thick layer (71) of silicon nitride or silicon oxynitride, which is applied directly or separated therefrom by a layer of silicon oxide (72) having a thickness of less than 5 nm to the side walls. The method leads to a very flat structure.
482245
Bartsen Johan W.
Dil Jan G.
N.v.philips'gloeilampenfabrieken
Van Steinburg C.e.
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