Method of manufacturing a semiconductor device employing...

Details Method of manufacturing a semiconductor device employing... Method of manufacturing a semiconductor device employing...

H - Electricity

01

L

356/163

H01L 21/26 (2006.01) H01L 21/00 (2006.01) H01L 23/29 (2006.01)

Patent

CA 1059241

ABSTRACT OF THE DISCLOSURE A silicon ion beam plants silicon ions in a silicon compound layer such as SiO2 or Si3N4 on a silicon substrate. Silicon ions are implanted by a silicon ion beam into the silicon compound layer and into a portion of the substrate on the side of its interface with the compound layer. The compound layer is therefore converted into a semi-insulating layer. The substrate is also converted into an amorphous silicon portion. The substrate is then annealed to reconvert the silicon portion into a single crystal with the remaining portion of the substrate. According to the method, an improved passivation property is imparted to the silicon compound layer and an exact control of the oxygen or nitrogen concentration and distribution is achieved.

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