Method of manufacturing a semiconductor device having a...

Details Method of manufacturing a semiconductor device having a... Method of manufacturing a semiconductor device having a...

H - Electricity

01

L

356/165

H01L 21/60 (2006.01) H01L 21/033 (2006.01) H01L 21/331 (2006.01)

Patent

CA 1288527

20104-8258 Abstract A semiconductor device comprising a circuit element having a first (9) and a second (14) electrode zone of opposite conductivity types, the dopant for the second electrode zone (14) being provided in the semiconductor body (1) via an opening (12) in a masking layer (11), the opening (12) then being reduced by providing edge portions (17) (16) of passivating material, and the second electrode zone (14) is connected to a conductive layer (22), which extends across the layer (11) and the edge portions (17) (16) into the opening of reduced size. The contact opening of reduced size can be derived from the doping opening (12) without taking into account an alignment tolerance. Preferably, the layer (11) comprises a pattern of electrically conducting material having a closed geometry, which pattern surrounds the opening (12) entirely.

532339

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