G - Physics – 03 – F
Patent
G - Physics
03
F
96/251
G03F 7/016 (2006.01) G03F 7/022 (2006.01) G03F 7/20 (2006.01) G03F 7/26 (2006.01)
Patent
CA 1325915
ABSTRACT A method of manufacturing a semiconductor device, in which a layer of photolacquer containing as a photoactive component a diazo oxide is provided on a semiconductor substrate. Of this layer, parts are irradiated by a first patterned irradiation and these parts are then rendered poorly developable by an intermediate treatment. Subsequently, the lacquer layer is subjected to a second non-patterned irradiation and is then developed. According to the invention, in the parts irradiated by the first irradiation a pigment is formed, which absorbs radiation having a wavelength at which diazo oxide is photosensitive. The second irradiation is carried out with radiation of that wavelength. Thus, lacquer tracks having a rectangular profile can be obtained in a simple manner.
535440
Geomini Marcellinus J. H. J.
Nijssen Wilhelmus P. M.
Vollenbroek Franciscus A.
Fetherstonhaugh & Co.
Geomini Marcellinus J. H. J.
Nijssen Wilhelmus P. M.
Philips Electronics N.v.
Vollenbroek Franciscus A.
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