Method of manufacturing a semiconductor device with a field...

Details Method of manufacturing a semiconductor device with a field... Method of manufacturing a semiconductor device with a field...

H - Electricity

01

L

H01L 21/336 (2006.01) H01L 21/28 (2006.01) H01L 29/49 (2006.01)

Patent

CA 2311967

In the known replacement gate process, the relatively high-ohmic poly gate is replaced by a low-ohmic metal gate by depositing a thick oxide layer and subsequently planarizing this layer by CMP until the gate is reached, which gate can be selectively removed and replaced by a metal gate. The process is simplified considerably by providing the gate structure as a stack of a dummy poly gate (4) and a nitride layer (5) on top of the poly gate. When, during the CMP, the nitride layer is reached, the CMP is stopped, thereby precluding an attack on the poly. The nitride and the poly are selectively removed relative to the oxide layer (10).

Selon le processus connu de remplacement de la grille d'un transistor, une grille polycristalline fortement ohmique est remplacée par une grille métallique faiblement ohmique par dépôt d'une épaisse couche d'oxyde et planarisation de cette couche par CMP, jusqu'à ce que ladite grille soit atteinte. Ensuite, cette grille peut être sélectivement retirée et remplacée par une grille métallique. Cette invention simplifie considérablement ce processus, la structure grille se présentant sous la forme d'un empilement constitué d'une grille polycristalline fictive (4) et d'une couche de nitrure (5), placée sur la grille polycristalline. L'étape de CMP se poursuit jusqu'à ce que cette couche de nitrure soit atteinte, ce qui empêche toute attaque de ladite grille polycristalline, laquelle est ensuite, avec la couche de nitrure, sélectivement retirée de la couche d'oxyde (10).

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device with a field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device with a field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with a field... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1882812