H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/23
H01L 29/36 (2006.01) H01L 21/461 (2006.01)
Patent
CA 2005791
ABSTRACT In a method of manufacturing a solid-state , particu- larly a semiconductor device, comprising the steps of treat- ing a surface of a carrier body, covering the treated surface with an active layer system including at least one thin lay- er, the active layer system determining an outer surface of the device, then depositing a covering thin layer on the out- er surface, at least partly at least one of the thin layers is doped or connected with an isotope having decay product influencing at least one predetermined physical property of a selected thin layer, the isotope being present in an amount causing modification of the predetermined physical property after a predetermined period. The proposed solid-state de- vice, comprising a carrier body, a thin layer system includ- ing at least one thin layer determining an outer surface of the device and a covering layer for protecting the outer surface, is completed or made with an inner part or at least one thin layer including at one or more radioactive doping component for influencing at least one characteristic phy- sical property of the active layer system. Fig. 2
G. Ronald Bell & Associates
Teleki Peter
LandOfFree
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