Method of manufacturing accurately contact windows in a...

Details Method of manufacturing accurately contact windows in a... Method of manufacturing accurately contact windows in a...

H - Electricity

01

L

345/1, 356/136

H01L 21/28 (2006.01) H01L 21/339 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1216965

ABSTRACT: The invention describes a method of contacting narrow regions, such as narrow polysilicon gates of a CCD having a width of, for example, 4 µm. Poly 2 and poly 3 layers, which are required already for the other CCD phases, are used as etching masks having two contact open- ings of 4 µm which are displaced both with respect to each other and with respect to the region to be contacted, so that it is possible to define a contact opening which is smaller than 4 µm and is aligned accurately above the gate to be contacted.

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