H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149, 345/5
H01L 27/00 (2006.01) G02F 1/01 (2006.01) G02F 1/136 (2006.01) G02F 1/1368 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 21/84 (2006.01) G02F 1/1362 (2006.01)
Patent
CA 2011627
There is disclosed a method of manufacturing an active matrix display device, in which particular emphasis is laid on the forming step of an insulation layer by the ALE method. The insulation layer can be a gate insulation layer, an inter-busline insulation layer, a protection layer or an auxiliary capacitor insulation layer of the display device. The method of forming the insulation layer comprises a predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H2O and/or O2 and form the metal oxide, under molecular flow condition for the duration of depositing almost a single atomic layer, and next subjecting the surface of the thus formed metal inorganic/ organic compound layer to the H2O vapor and/or O2 gas under molecular flow condition for the duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr. The invention reduces defects such as cracks and pinholes and increases the electrical breakdown voltage.
Endo Tetsuro
Nasu Yasuhiro
Okamoto Kenji
Soeda Shinichi
Watanabe Jun-Ichi
Fetherstonhaugh & Co.
Fujitsu Limited
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