Method of manufacturing and inspecting semiconductor devices

Details Method of manufacturing and inspecting semiconductor devices Method of manufacturing and inspecting semiconductor devices

H - Electricity

01

L

H01L 21/66 (2006.01) H01L 21/20 (2006.01) H01L 21/22 (2006.01) H01L 21/225 (2006.01) H01L 21/338 (2006.01) H01L 31/105 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2126292

ABSTRACT OF THE DISCLOSURE Closed tube methods have been employed to diffuse impurities selectively in a groups m - v semiconductor wafer. The closed tube methods are convenient for preventing the element of group V from dissociating out of the wafer surface by pressurizing the vapor pressure of the element of group V. Open tube methods failed in diffusing impurities without defects due to the fluctuation of the vapor pressure of the element of group V. Both methods have relied upon the vapor phase diffusion using a gas containing impurities. This invention adopts an open tube method of diffusing impurities in solid phase. This invention forms a suppression mask film having windows selectively on a wafer, and grows impurity-containing films on the windows by vapor phase reaction in an open reaction tube. The impurities diffuse from the impurity-containing films to the wafer substrate in solid phase. The impurity diffusion occurs either at the same time of the growth of the films or after the growth of the films at a different temperature. The compound semiconductor is covered with solid films during the impurity diffusion. This invention is immune from the difficulty of escape of elements of group V from the surface of a wafer.

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