H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/179
H01L 21/316 (2006.01) H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 21/28 (2006.01) H01L 29/10 (2006.01) H01L 29/417 (2006.01) H01L 29/51 (2006.01)
Patent
CA 1289271
Abstract: This invention is a method of manufacturing devices including a semiconductor/dielectric interface wherein at least a monolayer of the dielectric layer is in an ordered state. Dielectric compound layers having ordered interface structure can be produced on strained semiconductor materials, e.g., by native growth. For example, a 5 x 5 reconstruction at the interface between silicon and silicon oxide results upon oxidizing a thin layer of (111)-silicon which is on a layer of relaxed germanium-silicon. Also, an ordered silicon oxide can be grown on a (100)-silicon surface which is atomically smooth or whose surface steps are two monolayers high. Ordered surface structure is of interest in semiconductor device technology, e.g., at the interface between silicon and passivating silicon oxide and wherever a highly defect-free interface is beneficial.
539940
Bevk Joze
Feldman Leonard Cecil
Ourmazd Abbas
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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