Method of manufacturing optical devices and related...

H - Electricity – 01 – S

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H01S 5/34 (2006.01) H01L 21/18 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2459763

There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO2) film. Accordingly, the present invention provides a method of manufacturing an optical device, a device body portion (5a) from which the device is to be made including at least one Quantum Well (QW) (10a), the method including the steps of: causing an impurity material to intermix with the at least one Quantum Well (QW) (10a), wherein the impurity material at least includes Copper (Cu).

L'invention concerne un procédé amélioré de fabrication d'un dispositif optique faisant appel un processus à puits quantiques en réseaux (QWI) induit par des impuretés. Les procédés QWI concernés, en particulier des procédés de diffusion de lacunes sans impuretés (IFVD), présentent plusieurs inconvénients, par exemple la température à laquelle l'arséniure de gallium (GaAs) diffuse à l'extérieur à partir du matériau semi-conducteur vers le film de silice (SiO¿2?). L'invention concerne donc un procédé de fabrication d'un dispositif optique, une partie corps de dispositif (5a) à partir de laquelle le dispositif doit être fabriqué comprenant au moins un puits quantique (QW) (10a) Ledit procédé consiste à amener une impureté à se mélanger avec au moins un puits quantique (QW) (10a), ladite impureté comprenant au moins du cuivre (Cu).

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