H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/18 (2006.01) H01S 5/026 (2006.01) H01S 5/20 (2006.01) H01S 5/34 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2435964
There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent "point" defects.
L'invention concerne un procédé amélioré de fabrication de dispositifs optiques (40), notamment des dispositifs optoélectroniques à semi-conducteurs tels que des diodes laser, des modulateurs optiques, des amplificateurs optiques, des commutateurs optiques, et des détecteurs optiques. L'invention concerne également un procédé de fabrication d'un dispositif optique (40), dont une partie corps de dispositif (15) est constituée d'une structure (30) de puits quantique (QW). Ledit procédé consiste à traiter la partie corps de dispositif (15) de façon à créer des défauts étendus au moins dans une partie (53) de la partie dispositif (5). Chaque défaut étendu est un défaut structurel comprenant une pluralité de défauts ponctuels adjacents.
Hamilton Craig James
Kowalski Olek Peter
Marsh John Haig
Mcdougall Stewart Duncan
Borden Ladner Gervais Llp
The University Court Of The University Of Glasgow
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