G - Physics – 03 – F
Patent
G - Physics
03
F
96/253, 95/94.4
G03F 1/14 (2006.01) G03F 7/26 (2006.01) G11B 7/26 (2006.01)
Patent
CA 1313792
-27- ABSTRACT OF THE DISCLOSURE A method of manufacturing a photo-mask, which includes the steps of applying a resist film onto a sub- strate of quartz, glass and the like, subjecting the resist film to light exposure and development to form a fine resist pattern, etching the mask substrate covered by the fine resist pattern so as to cause a non-light transmitting thin film of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film on the resist pattern together with the resist film, thereby-to form the photo-mask. The disclosure is also directed to a photo-mask manufactured by the above method.
530396
Hirokane Junji
Inui Tetsuya
Katayama Hiroyuki
Mieda Michinobu
Miyake Tomoyuki
G. Ronald Bell & Associates
Sharp Kabushiki Kaisha
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