Method of manufacturing photosensors

Details Method of manufacturing photosensors Method of manufacturing photosensors

H - Electricity

01

L

345/1

H01L 31/02 (2006.01) H01L 27/146 (2006.01)

Patent

CA 1168739

ABSTRACT OF THE DISCLOSURE A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and con- taining hydrogen on a desired substrate forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140°C and not higher than 280°C. The heat treatment is performed preferably at a temperature between 170 to 250°C, at which greater effect will be provided. This heat treatment remarkably improves the photo response speed.

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