Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

H - Electricity

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H01L 21/30 (2006.01) H01L 21/306 (2006.01) H01L 21/3105 (2006.01) H01L 21/3213 (2006.01) H01L 21/763 (2006.01)

Patent

CA 1179836

- 1 - Abstract of the Disclosure In the manufacture of a semiconductor device having grooves for isolating elements on the same substrate, after filling the grooves with a filling material, this material is etched using a double-layer film made of substances different from each other. Side etching of the lower film of this double-layer film and etching of the filling material are alternately performed, each etching being carried out a plurality of times. In this way the upper surface of the filling material contained in each groove can be flattened to an extent not possible with former methods.

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