Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

H - Electricity

01

F

117/100, 148/3.2

H01F 41/04 (2006.01) H01L 21/306 (2006.01) H01L 33/00 (2006.01) H01S 5/223 (2006.01) H01S 5/323 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01)

Patent

CA 1247947

ABSTRACT OF THE DISCLOSURE The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Gal_xAlxAs (0 < x < 1) having a surface (100), a step of forming on the first layer a second layer of Gal_yAlyAs (0 < y < 1) having a surface (100), and a step of chemically etching the layers from a level above the second layer and along the direction of <011>. The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semi- conductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.

487734

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