Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

H - Electricity

01

L

356/149

H01L 21/34 (2006.01) H01L 21/027 (2006.01) H01L 21/338 (2006.01)

Patent

CA 1206626

- 1 - Abstract In manufacturing a field effect transistor, a pattern which has a wider upper layer and a narrower lower layer is formed at a gate electrode position. Using the pattern as a mask, first and second impurity regions are formed on both sides of a gate region by ion implantation. Subse- quently, at least the lower layer is buried in a material, such as an organic high polymer material, having a selec- tivity in etching characteristics with respect to the pattern material. After removing the lower layer, an electrode material is embedded in the resulting hole to form a gate electrode. The result is a method that, while using conventional photolithography, enhances fabrication at the submicron level and achieves improved accuracy of alignment.

433478

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1314621