H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/39
H01L 29/10 (2006.01) H01L 21/332 (2006.01) H01L 29/74 (2006.01)
Patent
CA 1293334
Abstract of the Disclosure A method of manufacturing a semiconductor device with overvoltage self-protection of punchthrough type comprises the following steps. (a) A step of making a recess in a P gate-base layer from its surface exposed to the top surface of a substrate. In this step, the recess is formed to such depth that a space-charge layer produced in the gate- base layer when a predetermined breakover voltage for self-protection is applied to a thyristor reaches at least the bottom of the recess, and the bottom of the recess extends close to a junction between the gate-base layer and an emitter layer. (b) A step of doping the gate-base layer with P type impurities from the bottom of the recess to gate- base layer to form a region of low impurity concentra- tion just under the bottom of the recess. The amount (atoms/cm2) of the P type impurities is substantially equal to ND x ? which is the product of the depth ? (cm) of the space-charge layer produced in the base layer when the breakover voltage is applied to the thyristor and the impurity concentration ND (atoms/cm3) of an N base layer;. (c) A step of forming an electrode on the surface of the recess.
583515
Kanaya Masatoshi
Tsunoda Yoshiaki
Kabushiki Kaisha Toshiba
Marks & Clerk
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