Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

H - Electricity

01

L

356/192, 356/22

H01L 21/263 (2006.01)

Patent

CA 1092728

ABSTRACT OF THE DISCLOSURE Disclosed is a method of manufacturing semiconductor devices including a step of electron irradiation of the devices to alter the turnoff and forward drop characteristics of the devices. The irradiation is carried out at a temperature above 100°C, and preferably in the range of 150° to 375°C. no post-irradiation annealing step is required.

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