Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

H - Electricity

01

L

356/149

H01L 21/337 (2006.01) H01L 21/3065 (2006.01) H01L 21/335 (2006.01)

Patent

CA 2023259

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES ABSTRACT In fabricating a junction field effect transistor, specifically a static induction transistor, an epitaxial layer of high resistivity N-type silicon is grown on a substrate of low resistivity silicon. The surface of the epitaxial layer is marked in a pattern to expose a plurality of elongated surface areas. The wafer is subjected to reactive ion etchings in SiCl4 and Cl2 and subsequently in Cl2 to form parallel grooves with rounded intersection between the side walls and bottoms of the grooves. Ridges of silicon are interposed between grooves. A layer of silicon oxide is grown on all the silicon surfaces. The grooves are filled with deposited silicon oxide and silicon oxide is removed to form a planar surface with the upper surfaces of the ridges. P-type conductivity imparting material is ion implanted into alternate ridges and diffused to form gate regions which extend laterally beneath the silicon dioxide in the adjacent grooves, N-type conductivity imparting material is ion implanted in the top of the intervening (source) ridges. Metal contacts are applied to the gate ridges, source ridges, and the bottom of the substrate.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1478591