C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.1
C30B 35/00 (2006.01) C23C 16/455 (2006.01) C30B 25/00 (2006.01) C30B 25/14 (2006.01) C23C 16/44 (2006.01)
Patent
CA 1262086
ABSTRACT: In the method a number of slices of semiconduc- tor material are heated in a reactor tube arranged inside a furnace tube and having a tube wall which is provided with openings, through which a reaction gas is passed for depositing a semiconductor material. This is effected by producing in the furnace tube a flow of the reaction gas along the outer side of the wall of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By the use of this method, it is prevented that particles of different size and composition- which may be formed in the reaction gas - are deposited on the slices.
478932
Thijssen Henri J.
Uijen Antonius J.m.
Van Der Putte Paulus Z.a.m.
Fetherstonhaugh & Co.
Philips Electronics N.v.
Thijssen Henri J.
Uijen Antonius J.m.
Van Der Putte Paulus Z.a.m.
LandOfFree
Method of manufacturing semiconductor devices, in which... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor devices, in which..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices, in which... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1195400