Method of manufacturing semiconductor devices in which oxide...

Details Method of manufacturing semiconductor devices in which oxide... Method of manufacturing semiconductor devices in which oxide...

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H01L 21/265 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01) H01L 21/32 (2006.01) H01L 21/322 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1088217

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES IN WHICH OXIDE REGIONS ARE FORMED BY AN OXIDATION MASK DISPOSED DIRECTLY ON A SUBSTRATE DAMAGED BY ION IMPLANTATION Abstract of the Disclosure A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxidation. In order to prevent the formation of a projecting oxide beak under the masking layer a nitride oxidation mask is applied directly to the substrate which has been previously ion-implanted to a controlled depth and then annealed to generate a dense dislocation network array on the substrate surface to prevent mechanical stress defects which normally would occur when a nitride mask is applied directly to a substrate.

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