H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/82 (2006.01) H01S 5/02 (2006.01) H01S 5/026 (2006.01) H01S 5/12 (2006.01) H01S 5/227 (2006.01)
Patent
CA 2369680
When manufacturing semiconductor elements, a group of semiconductor elements having a diffraction grating formed partly on the side of the facet from which laser light is emitted is formed collectively on a semiconductor wafer by using semiconductor process technologies. The semiconductor laser elements are arranged such that the light emitting facets are opposite to each other to thereby form each diffraction grating of the semiconductor laser elements arranged opposite to each other as one diffraction grating, cleaving this diffraction grating at respective cleavage planes to cut out laser bars, followed by the cleavage of cleavage planes to cut out semiconductor laser elements.
Irino Satoshi
Tsukiji Naoki
Fetherstonhaugh & Co.
The Furukawa Electric Co. Ltd.
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