Method of manufacturing semiconductor integrated circuit

Details Method of manufacturing semiconductor integrated circuit Method of manufacturing semiconductor integrated circuit

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H01L 21/20 (2006.01) H01L 21/223 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01) H01L 21/764 (2006.01)

Patent

CA 1039856

METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT ABSTRACT OF THE DISCLOSURE In a monolithic semiconductor integrated circuit, when polycrystalline semiconductor is used in a portion of substrate insulatively supporting plural semiconductor single crystal regions forming circuit elements, the oxidation process of the impurity dif- fusion process at high temperatures and in oxygen atmosphere is started after a passivation film such as silicon oxide or silicon nitride, to prevent oxygen from diffusing or penetrating into the surface of the polycrystalline semiconductor, has been formed on the same surface. And by leaving the passivation film lying on that surface during the oxidation and diffusion process is prevented the warp of the substrate that may be caused due to the diffusion or penetration of oxygen into the polycrystalline semiconductor region.

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