Method of manufacturing silicon carbide substrate

Details Method of manufacturing silicon carbide substrate Method of manufacturing silicon carbide substrate

H - Electricity

01

L

H01L 21/02 (2006.01) C30B 29/36 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2753709

A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate (10) formed of silicon carbide and a SiC substrate (20) formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate (10) and the SiC substrate (20) to have their main surfaces (10A, 20B) in contact with each other; heating the stacked substrate to join the base substrate (10) and the SiC substrate (20) and thereby fabricating a joined substrate (3); and heating the joined substrate (3) such that a temperature difference is formed between the base substrate (10) and the SiC substrate (2), and thereby discharging voids (30) formed at the step of fabricating the joined substrate (3) at an interface (15) between the base substrate (10) and the SiC substrate (20) to the outside.

La présente invention a trait à un procédé de fabrication d'un substrat en carbure de silicium comportant les étapes consistant : à utiliser un substrat de base (10) qui comprend du carbure de silicium et un substrat en SiC (20) qui comprend du carbure de silicium monocristallin ; à empiler le substrat de base (10) et le substrat en SiC (20) l'un sur l'autre de sorte que les surfaces principales (10A, 20B) des substrats soient en contact afin de préparer un substrat stratifié ; à chauffer le substrat stratifié de manière à coller le substrat de base (10) et le substrat en SiC (20) l'un sur l'autre pour obtenir un substrat collé (3) ; et à chauffer ledit substrat collé (3) de sorte qu'un différentiel de température soit établi entre le substrat de base (10) et le substrat en SiC (20) afin d'obtenir le substrat collé (3) dont l'extérieur ne possède pas de vides (30) formés dans l'interface de collage (15) entre ledit substrat de base (10) et ledit substrat en SiC (20).

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