C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 17/20 (2006.01) C01B 33/00 (2006.01)
Patent
CA 2202590
Silicon sulfide is manufactured from the fine powder of silicon covered thoroughly with sulfur at lower temperature less than 800°C in vacuum. To produce the silicon sulfide, silicon should be ground in the non-oxidizing condition to prevent the formation of silicon oxide layer that should cause to retard the reaction or necessitate higher temperature. The silicon powder is dispersed sufficiently in the molten sulfur. At this time, the quantity of sulfur added needs more than 1.1 times in comparison with the stoichiometric quantity of silicon sulfide. All surface of silicon powder should be covered with sulfur to avoid sintering between silicon particles in the process of heating.
Ikeda Nobuhiko
Yamamoto Kazutomi
Furukawa Co. Ltd.
Marks & Clerk
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