Method of manufacturing single-crystal film

Details Method of manufacturing single-crystal film Method of manufacturing single-crystal film

H - Electricity

01

L

148/3.5

H01L 21/268 (2006.01) H01L 21/20 (2006.01) H01L 21/263 (2006.01)

Patent

CA 1203148

- 1 - Abstract: The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the insular insulating film formed on the single-crystal substrate.

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