Method of manufacturing single crystals by growth from the...

Details Method of manufacturing single crystals by growth from the... Method of manufacturing single crystals by growth from the...

C - Chemistry, Metallurgy

30

B

148/2.1

C30B 25/00 (2006.01) C01G 15/00 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1071068

PHF 75525C ABSTRACT A method of obtaining, by crystal growth from a vapour phase, single crystals constituted mainly of gallium nitride. The growth is effected during synthesis of gallium nitride which is obtained by the reaction of gallium halide with ammonia immersed in a carrier gas in an open reactor. The method is characterized in that, during at least a part of the growth of the crystal, free hydrochlor?s acid under a partial pressure of 2 to 50% of the overall pressure is introduced into the re- action and deposition zone.

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