Method of manufacturing transistors by means of ion...

Details Method of manufacturing transistors by means of ion... Method of manufacturing transistors by means of ion...

H - Electricity

01

L

356/172, 356/176

H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1078530

ABSTRACT: A method of manufacturing transistors by means of ion implantation. The method is characterized by the implantation of a uniform extrinsic base zone, by providing a mask having at least two windows, and by the implantation of the emitter zone and then of the intrinsic active base zone via a first window, after which the implanted zones are finally annealed. - 30 -

271749

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