Method of measuring junction temperature

Details Method of measuring junction temperature Method of measuring junction temperature

G - Physics

01

R

G01R 31/26 (2006.01)

Patent

CA 2080239

ABSTRACT An object of this invention is to provide a method of measuring a junction temperature of a semiconductor device without actually measuring a temperature dependency of a forward voltage. At the measurement preparatory stage, measurement of current/voltage at a room temperature of a diode to be measured is carried out to determine an ideal factor and a forward voltage at the room temperature of the diode to read a temperature coefficient corresponding to the value of the ideal factor from the chart showing the relationship between the ideal factor and the temperature coefficient. Further, at the next main measurement stage, the diode is placed in the circumstance where a junction temperature is desired to be actually measured to measure a forward voltage, thus to determine a junction temperature at that time from the value of the forward voltage, the value of the forward voltage previously determined at the room temperature, and the temperature coefficient.

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