Method of modifying an exposed surface of a semiconductor wafer

H - Electricity – 01 – L

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Details

H01L 21/30 (2006.01) B24B 7/22 (2006.01) B24B 21/04 (2006.01) B24B 37/04 (2006.01) B24B 53/007 (2006.01) B24D 3/28 (2006.01) B24D 11/00 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 2231159

A method of modifying an exposed surface of a semiconductor wafer that includes the steps of: (a) contacting the surface with a fixed abrasive article having a three-dimensional textured abrasive surface that includes a plurality of abrasive particles and a binder in the form of a pre-determined pattern; and (b) relatively moving the wafer and the fixed abrasive article to modify said surface of the wafer.

L'invention porte sur un procédé de modification de la surface exposée d'une tranche de semi-conducteur consistant: (a) à mettre ladite surface en contact avec un article abrasif fixe dont la surface à texture abrasive tridimensionnelle comporte des particules abrasives et un liant présentant un motif donné; et (b) à déplacer la tranche relativement à l'article abrasif fixe pour modifier ladite surface de la tranche.

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