Method of monitoring the machining by ion bombardment, of a...

Details Method of monitoring the machining by ion bombardment, of a... Method of monitoring the machining by ion bombardment, of a...

G - Physics

01

R

356/200

G01R 29/22 (2006.01) H01L 21/66 (2006.01) H01L 41/22 (2006.01)

Patent

CA 1061474

ABSTRACT OF THE DISCLOSURE: The present invention relates to the monitoring of the machining of a wafer of piezoelectric material by a beam of charged particles. The monitoring method is performed by measuring and displaying the complex voltage-current relation- ship produced by the electrical excitation of the wafer using a variable-frequency measuring signal applied to electrodes carried by the wafer.

273231

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