Method of obtaining polycrystalline silicon and workpiece...

Details Method of obtaining polycrystalline silicon and workpiece... Method of obtaining polycrystalline silicon and workpiece...

C - Chemistry, Metallurgy

01

B

23/325, 49/78.1

C01B 33/02 (2006.01) C23C 16/01 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1125028

LARRY HILL, et al SEMI-8 METHOD OF OBTAINING POLY- CRYSTALLINE SILICON AND WORKPIECE USEFUL THEREIN ABSTRACT OF THE DISCLOSURE Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a sub- stantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/ coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a work- piece useful in the practice of the invention.

348373

Affiliated with

Also associated with

Rating

Method of obtaining polycrystalline silicon and workpiece... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of obtaining polycrystalline silicon and workpiece..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of obtaining polycrystalline silicon and workpiece... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-922589