H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/065 (2006.01) H01S 5/0625 (2006.01) H01S 5/06 (2006.01) H01S 5/062 (2006.01) H01S 5/10 (2006.01) H01S 3/18 (1995.01)
Patent
CA 2069657
A semiconductor laser (1) is known that is monolithically integrated on a substrate (2) and whose cavity (41) has a branched structure that is simply contiguous in a topological sense. The semiconductor laser (1) includes a plurality of regions (8-11) that enclose the cavity (41). According to the invention, the semiconductor laser (1) is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current corresponds to the reciprocal of the round-trip time or an integral multiple of this reciprocal of the light pulses generated by the alternating current in the semiconductor laser (1).
Le laser à semi-conducteur (1) est intégré de façon monolithique à un substrat (2) et possède une cavité (41) à structure ramifiée qui est simplement contigüe au sens topologique. Le laser à semi-conducteur (1) comprend plusieurs zones (8-11) qui entourent la cavité (41). D'après l'invention, le laser à semi-conducteur (1) fonctionne comme un laser à semi-conducteur à modes bloqués, et un courant alternatif passe dans, au moins, une zone en plus du courant continu. La fréquence du courant alternatif correspond à la réciproque du temps d'aller et retour ou à un multiple entier de cette réciproque des impulsions lumineuses produites par le courant alternatif dans le laser à semi-conducteur (1).
Baums Dieter
Dutting Kaspar
Hildebrand Olaf
Idler Wilfried
Laube Gert
Alcatel N.v.
Smart & Biggar
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