Method of optimizing an n-gram memory structure

G - Physics – 06 – F

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G06F 17/30 (2006.01) G06F 7/00 (2006.01) H03M 7/30 (2006.01)

Patent

CA 2304478

By placing a low cardinality node (1084) or a leaf in a lower level (841), and a high cardinality node (620) or a leaf at a higher level (409), an optimal memory structure is automatically generated which yields the best compression within N-gram technology. After making an initial list of parallel streams or fields, the streams are ordered in accordance with increasing cardinality. Adjacent streams (fields), or nodes (L and LC), are paired (4383), and the children of the resulting node are eliminated from the list, while a new parent node (5432) is added to the list. The resulting new list (112) is re- arranged from right to left (817) as a function of increasing cardinality, and the pairing steps are repeated until a single root node remains for the final memory (8554).

En plaçant un noeud ou une feuille de cardinalité basse (1084) à un niveau inférieur (841) et un noeud (620) ou une feuille de cardinalité élevée à un niveau supérieur (409), on génère automatiquement une structure mémoire optimale qui donne, en technologie N-gram, la meilleure compression. Après l'établissement d'une liste initiale des flux ou champs parallèles, les flux sont classés selon une cardinalité croissante. Les flux (champs) ou noeuds (L ou LC) adjacents sont appariés (4383) et les enfants du noeud obtenu éliminés de la liste, tandis qu'un nouveau noeud parent (5432) y est ajouté. La nouvelle liste obtenue (112) est réarrangée de la droite vers la gauche (817) selon une cardinalité croissante et les étapes d'appariement sont répétées jusqu'à ce qu'un seul noeud racine reste pour la mémoire finale (8554).

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