Method of plasma enhanced silicon oxide deposition

Details Method of plasma enhanced silicon oxide deposition Method of plasma enhanced silicon oxide deposition

C - Chemistry, Metallurgy

23

C

204/174, 204/96.

C23C 14/10 (2006.01) C23C 16/40 (2006.01) C23C 16/509 (2006.01)

Patent

CA 1340053

A method of depositing a hard silicon oxide based film is provided by controllably flowing a gas stream including an organosilicon compound into a plasma and depositing a silicon oxide onto a substrate while maintaining a pressure of less than about 100 microns during the depositing. The organosilicon compound is preferably combined with oxygen and helium and at least a portion of the plasma is preferably magnetically confined adjacent to a substrate during the depositing, most preferably by an unbalanced magnetron. These silicon oxide based films may be reproducibly deposited on small or large substrates, such as glass, plastic, mineral or metal, with preselected properties.

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