C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.05
C23C 14/34 (2006.01) B01J 19/08 (2006.01) C09K 13/00 (2006.01) H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01)
Patent
CA 1281307
ABSTRACT A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.
502807
Babu Suryadevara V.
Hoffarth Joseph G.
Knoll Allan R.
Mlynko Walter E.
Rembetski John F.
International Business Machines Corporation
Saunders Raymond H.
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