H - Electricity – 01 – L
Patent
H - Electricity
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L
149/6
H01L 21/308 (2006.01)
Patent
CA 1181669
- 1 - METHOD OF PREFERENTIALLY ETCHING OPTICALLY FLAT MIRROR FACETS IN InGaAsP/InP HETEROSTRUCTURES Abstract of the Disclosure Highly reproducible, optically flat mirror facets are created by etching a predetermined area of the InGaAsP/InP heterostructure system to expose a crystallographic surface throughout the entire heterostructure system. Contact of the exposed surface with HCl causes a preferred crystallographic plane to be exposed as an optically flat mirror face.
448585
Coldren Larry A.
Furuya Kazuhito
Kirby Eades Gale Baker
Western Electric Company Incorporated
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