C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.31, 148/2
C23C 14/06 (2006.01) C03C 21/00 (2006.01) C03C 23/00 (2006.01) C23C 14/48 (2006.01) H01L 21/265 (2006.01)
Patent
CA 2014758
ABSTRACT OF THE DISCLOSURE The present invention concerns a method of preparing an alkali metal diffusion-preventive layer by applying one of three specific methods in a method of forming an alkali metal diffusion-preventive layer containing phosphorus at the inside of the substrate containing silicon by ion implantation of phosphorus, thereby enabling to prepare an alkali metal diffusion-preventive layer having higher alkali metal diffusion-preventive performance than that of the alkali metal diffusion-preventive layer prepared by the conventional method.
Oyoshi Keiji
Tagami Takashi
Tanaka Shuhei
Gowling Lafleur Henderson Llp
Nippon Sheet Glass Co. Ltd.
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