Method of preparing crystalline compounds a suiva xx b suvia xx

Details Method of preparing crystalline compounds a suiva xx b suvia xx Method of preparing crystalline compounds a suiva xx b suvia xx

C - Chemistry, Metallurgy

01

B

23/126, 148/2.1

C01B 33/00 (2006.01) C01G 17/00 (2006.01) C01G 19/00 (2006.01) C01G 21/00 (2006.01) C23C 16/30 (2006.01) C30B 25/00 (2006.01)

Patent

CA 1082424

Abstract of the Disclosure A method of preparing crystalline compounds AIVABVIA, wherein AIVA is Si, Ge, Sn, Pb; BVIA is S, Se, Te; which comprises thermal decomposition, at the surface of a sub- strate heated to a temperature ranging from 250 to 450°C, of an elementoorganic compound containing chemically com- bined elements AIVA and BVIA with the generic formula RkA1IVABmVIAR'n, wherein AIVA is Si, Ge, Sn, Pb; BVIA is S, Se, Te; R and R' are hydrogen or an alkyl with 1 to 4 car- bon atoms; k = 0-6, 1 = 1-2, m = 1 -2. the method according to the present invention makes it possible to substantially reduce the decomposition temperature of the starting elementoorganic compound at the substrate surface and to obtain the final products which are stoichiometric in the composition thereof. The present invention is useful in the manufacture of semiconductor elements and protective coatings.

271569

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