Method of preparing dielectric insulator separated substrate...

Details Method of preparing dielectric insulator separated substrate... Method of preparing dielectric insulator separated substrate...

H - Electricity

01

L

356/132

H01L 21/302 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1059647

METHOD OF PREPARING DIELECTRIC INSULATOR SEPARATED SUBSTRATE FOR SEMICONDUCTOR INTEGRATED CIRCUITS ABSTRACT OF THE DISCLOSURE A dielectric insulator separated substrate is prepared which comprises a plurality of monocrystalline semiconductor island regions in which circuit elements are formed and a support region for supporting the island regions while separating them from each other electrically and insulatedly through a dielectric film. After poly- crystalline semiconductor layers and at least one oxygen diffusion preventive film are laminated alternately to form the support region having its extreme outer layer comprised by the polycrystalline semiconductor layer, the extreme outer polycrystalline semiconductor layer is polished to such a thickness as to prevent the substrate from being curved greatly by the wedge action due to the oxygen diffusion. The extreme outer poly- crystalline semiconductor layer thus polished exposes a flat surface, thereby assuring easiness of the prepara- tion of the substrate. The substrate devoid of any curveness deformations permits a highly accurate forma- tion of the circuit elements in the substrate.

251240

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