Method of preparing oxide superconducting thin film

Details Method of preparing oxide superconducting thin film Method of preparing oxide superconducting thin film

H - Electricity

01

L

H01L 39/12 (2006.01) B05D 3/00 (2006.01) B05D 7/24 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2091023

ABSTRACT OF THE DISCLOSURE Provided herein is a method of efficiently preparing a thin film having a higher critical temperature as to an oxide superconducting material containing T?. A thin film of an oxide containing T? is formed and then heat treated at a temperature of about 850 to 950°C for a short time, and thereafter further heat treated at a temperature, which is lower than the preceding heat treatment temperature, of at least about 750°C for a long time. The thin film is heat treated in an atmosphere having an oxygen partial pressure of not more than about 0.1 atm. In formation of a T? superconducting thin film, on the other hand, a 1212 phase layer is reacted with an amorphous Ca-Cu-O layer to form a 1223 phase layer, or a layer containing volatile metal elements (T?, Bi and Pb, for example) and oxygen is reacted with another layer containing other elements than the volatile metal elements to form a superconducting film having a high critical temperature.

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