Method of preparing polyaniline films and highly...

Details Method of preparing polyaniline films and highly... Method of preparing polyaniline films and highly...

C - Chemistry, Metallurgy

08

G

C08G 73/00 (2006.01) C08G 73/02 (2006.01) C08J 5/18 (2006.01) H01B 1/12 (2006.01) H01L 51/00 (2006.01)

Patent

CA 2717375

The present invention relates to a method of preparing polyanilines by oxidizing polymerization of aniline in an acidic aqueous medium comprising at least one synthesis step that is carried out in the presence (a) of the monomer of formula (An) R0Rm-C6H4-NHR' in which R0, Rm and R', independently of one another, represent H, or linear or branched alkyl or alkoxy groups having 1 to 6 carbon atoms, (b) of an acid, (c) of an oxidizing agent and (d) of a salt, characterized in that the acid is formic acid. The PANI, deposited and dried on a support, provides films that possess 80% of crystalline phase, having a strong alignment of the p-p interactions parallel to the surface. The PANI and the films obtained may be used as a semiconductor and/or a conductor.

La présente invention concerne un procédé de préparation de polyanilines par polymérisation oxydante d'aniline en milieu aqueux acide comportant au moins une étape de synthèse s'effectuant en présence (a) du monomère de formule (An) R0R m C6H4-NHR' dans laquelle R0, R m et R', indépendamment l'un de l'autre, représentent H, ou alkyle, alkoxy ou linéaires ou ramifiés ayant de 1 à 6 atomes de carbone, (b) d'un acide, (c) d'un agent oxydant et (d) d'un sel, caractérisé en ce que l'acide est l'acide formique. La PANI déposée et séchée sur support fournit des films possédant 80% de phase cristalline, présentant un fort alignement des interactions .pi.-.pi. parallèlement à la surface. La PANI et les films obtenus peuvent être utilisés à titre de semi- conducteur, et/ou conducteur.

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