Method of preparing primary refractory metal

Details Method of preparing primary refractory metal Method of preparing primary refractory metal

C - Chemistry, Metallurgy

22

B

C22B 34/00 (2006.01) C22B 5/12 (2006.01) C22B 34/20 (2006.01) C22B 34/24 (2006.01)

Patent

CA 2603012

A method of preparing primary refractory metais (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).

L~invention concerne une méthode de préparation de métaux réfractaires de première fusion (par ex., le tantale de première fusion) en mettant en contact un oxyde métallique réfractaire particulaire (par ex., le pentoxyde de tantale) avec un gaz chauffé (par ex., un plasma). Le gaz chauffé comprend de l~hydrogène gazeux. La gamme de températures du gaz chauffé et le rapport massique d~hydrogène gazeux par rapport à l~oxyde métallique réfractaire sont sélectionnés de façon à ce que : (i) le gaz chauffé comprenne de l~hydrogène atomique ; (ii) l~oxyde métallique réfractaire de la matière d'alimentation soit substantiellement stable thermodynamiquement (c.-à-d. que la formation concourante de suboxydes non réduits par l~hydrogène atomique soit diminuée) ; et (iii) l~oxyde métallique réfractaire soit réduit au contact du gaz chauffé, formant ainsi un métal réfractaire de première fusion (par ex., le tantale de première fusion et/ou le niobium de première fusion).

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