H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/36 (2006.01) H01L 21/465 (2006.01)
Patent
CA 2069309
The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.
Procédé de formation d'une surface plane sur un cristal au carbure de silicium monocristallin, par exposition de la surface plane à un plasma de gravure jusqu'à élimination d'éventuelles détériorations de surface ou de sous-surface provoquées par n'importe quelle préparation mécanique. Toutefois, la gravure est limitée à une durée inférieure à celle pendant laquelle la gravure au plasma développe de nouveaux défauts dans la surface ou aggrave les défauts existants, et tandis que l'on utilise un système d'électrode et de gaz au plasma n'aggravant ou ne provoquant pas eux-mêmes les défauts de la surface.
Edmond John A.
Kong Hua-Shuang
Palmour John W.
Cree Inc.
Cree Research Inc.
Sim & Mcburney
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