H - Electricity – 01 – L
Patent
H - Electricity
01
L
117/23.3
H01L 31/18 (2006.01) H01G 9/02 (2006.01)
Patent
CA 1176115
ABSTRACT Semiconductive photoanodes formed of titanium dioxide (TiO2) are known for use in photoelectrochemical cells. They have been made by various techniques, including chemical vapour deposition, thermal oxidation or anodic oxidation of thin titanium foils, hot pressing of TiO2 powder, and plasma spraying. The present invention provides a method for the fabrication of TiO2 thick film photoanodes, which method is simple, inexpensive and suitable for mass production of large area plates. The method comprises screen printing a film of conductive material on a clean alumina substrate which is then heated to fuse the conductive material into a conductive layer. A first layer of TiO2 particles in an organic carrier is then screen-printed over the conductive layer, at least 10% of the TiO2 being of anatase form. The structure is then heated to burn off the organic carrier and to transform at least part of the TiO2 from anatase form to rutile form, this resulting in good adhesion of the TiO2 layer to the conductive layer. A second layer of TiO2 is then screen-printed over the first layer and heated, the second layer being provided in case there should be pinholes in the first layer which would adversely affect the anode structure when submersed in an electrolyte. The resulting structure is then heated in a reducing atmosphere, e.g. anhydrous ammonia or hydrogen, to transform the TiO2 to TiO2-x where x is between 0 and 1, to reduce the electrical resistivity of the films.
403995
Ahmad Aftab
Ahmed Syed M.
Blaauw Cornelis
Naguib Hussein M.
Her Majesty In Right Of Canada As Represented By The Minister Of Mines And Resources
Smart & Biggar
LandOfFree
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