Method of processing siloxane-polyimides for electronic...

Details Method of processing siloxane-polyimides for electronic... Method of processing siloxane-polyimides for electronic...

H - Electricity

01

L

356/147

H01L 21/70 (2006.01) H01L 21/312 (2006.01) H01L 21/48 (2006.01) H01L 21/768 (2006.01) H01L 23/538 (2006.01) H05K 3/00 (2006.01) H05K 3/38 (2006.01) H05K 3/46 (2006.01)

Patent

CA 2014911

RD-19,050 METHOD OF PROCESSING SILOXANE-POLYIMIDES FOR ELECTRONIC PACKAGING APPLICATIONS A method of forming a multilayer metallization pattern using siloxane polyimide dielectric layers comprises forming the first siloxane polyimide layer, laser etching holes in the first layer, plasma etching the first layer to be sure the holes are clean, then cleaning the surface of the first layer in an etchant for silicon oxide, after which the metallization layer is formed and patterned and a second siloxane polyimide layer is formed there over with good adhesion.

Affiliated with

Also associated with

Rating

Method of processing siloxane-polyimides for electronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of processing siloxane-polyimides for electronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of processing siloxane-polyimides for electronic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1521267