Method of producing a dielectric of two-layer construction

Details Method of producing a dielectric of two-layer construction Method of producing a dielectric of two-layer construction

H - Electricity

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356/178

H01L 21/20 (2006.01) C30B 19/00 (2006.01) C30B 19/02 (2006.01) G02F 1/00 (2006.01)

Patent

CA 1089114

S P E C I F I C A T I O N T I T L E "METHOD OF PRODUCING A DIELECTRIC OF TWO-LAYER CONSTRUCTION" ABSTRACT OF THE DISCLOSURE A thin (less than 500 µm) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi12GeO20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three- component system defined by the formula: (Bi2O3)?(Geo2)?(Y + xGa2O3) wherein Y is a component selected from the group consisting of CaO, MgO, BaO, SrO and mixtures thereof and x is a numeral ranging from 0.05 to 5Ø The pseudo-three-component system is so-selected that in a ternary diagram of the three individual components, the mol ratio of Bi2O3:GeO2:(Y + xGa2O3) is sur- rounded by a range connecting points A, B and C on such ternary diagram wherein point A is 0.760:0.002:0.238; point B is 0.994:0.002:0.004; and point C is 0.760:0.236:0.004. - i -

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