C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
25/128
C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/64 (2006.01)
Patent
CA 1124996
METHOD OF PRODUCING A HIGH DENSITY SILICON CARBIDE PRODUCT ABSTRACT A method of pressureless sintering silicon carbide mixtures to obtain a sintered, dense product when the silicon carbide starting materials do not include a densification aid, such as boron, beryllium or aluminum, is described. The starting materials are mixtures containing predominantly particulate silicon carbide and include usually less than about 10 and, preferably, less than about 6 percent by weight of carbon in the form of elemental carbon or in the form of a carbon source material. The mixtures may also contain minor amounts of other additives, such as lubricants, surfactants or agglutinants, to aid in forming a compact, or green body, from the mixtures, or minor amounts of other ceramic materials de- pending upon the nature of the desired final product. The mixtures are formed into compacts, or green bodies, by known techniques. The powder compact is sintered under substantially pressureless conditions in a sintering atmosphere containing boron to product a sintered product having a density of at least 85 percent and, preferably, greater than about 90 percent of the theoretical density of silicon carbide.
343688
Fetherstonhaugh & Co.
Kennecott Corporation
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